Intracellular chromosome breaks on silicon surface.

The genotoxicity of silicon (Si) is investigated by soaking crystalline Si in a complete culture medium for 60 days and conducting micronuclei tests (MNTs) utilizing hamster ovary (CHO) cells and its Ku80 deficient CHO mutant (xrs5) cells (DNA double-strand breaks repair deficiency). The intracellular concentrations of reactive oxygen/nitrogen species (ROS/RNS) on Si are determined to elucidate the relationship between ROS/RNS and Si-induced genotoxicity by using CHO cells. The cells are treated with ROS scavenger (dimethyl sulfoxide) and MNT are performed. The results indicate that the intracellular concentration of ROS and nitrogen oxide (NO) on Si is higher than those on the control group by about 38% and 12%. ROS/RNS include superoxide (O(2)*(-)) anion, NO, and peroxynitrite (ONOO(-)) which can injure chromosomes and induce high cellular DNA double-strand breaks (DSBs).